RT1N434X is a one chip transistor with built-in bias resistor,PNP type is RT1P434X. FEATURE Built-in bias resistor (R1=4.7kΩ,R2=22kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit,driver circuit. 2.8 1.90 0.95 0.95 0.4 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING UNIT:mm RT1N.
ctor ③:Base ISAHAYA ELECTRONICS CORPORATION 0.7 0.55 0~0.1 0.12 MARKING RT1N434C RT1N434M RT1N434U N4 type name RT1N434X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N434S N43 4 □□ type name Lot № MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER VCBO VEBO VCEO VIN IC I CM PC Tj Tstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N434U 150 RATING RT1N434M RT1N434C 50 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RT1N434M |
Isahaya Electronics |
Transistor | |
2 | RT1N434S |
Isahaya Electronics |
Transistor | |
3 | RT1N434U |
Isahaya Electronics |
Transistor | |
4 | RT1N430C |
Isahaya Electronics |
Transistor | |
5 | RT1N430M |
Isahaya Electronics |
Transistor | |
6 | RT1N430S |
Isahaya Electronics |
Transistor | |
7 | RT1N430U |
Isahaya Electronics |
Transistor | |
8 | RT1N431C |
Isahaya Electronics Corporation |
Transistor | |
9 | RT1N431M |
Isahaya Electronics Corporation |
Transistor | |
10 | RT1N431S |
Isahaya Electronics Corporation |
Transistor | |
11 | RT1N431T |
Isahaya Electronics Corporation |
Transistor | |
12 | RT1N431U |
Isahaya Electronics Corporation |
Transistor |