RSD200N10 - Rohm

RSD200N10 4V Drive Nch MOSFET

4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3.

Features

1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.
Applications Switching
Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source)
Packaging specifications Package Code Type Basic ordering unit (pieces) RSD200N10 Taping TL 2500
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Drain-source voltage VDSS 100 Gate-source voltage Drain current Continuous Pulsed VGSS ID IDP ∗3 ∗1 ±20 ±20 ±80 Source current.