RSD100N10FRA - ROHM

RSD100N10FRA Nch 100V 10A Power MOSFET

4V Drive Nch MOSFET RSD100N10FRA  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) 4V drive. 3) High power package.  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSSDD110000NN101F0RA Taping TL 2500  Data Sheet AEC-Q101 Qualified  Dimensions (Unit : mm) CPT3 (SC-63) .

Features

1) Low on-resistance. 2) 4V drive. 3) High power package.
 Application Switching
 Packaging specifications Package Type Code Basic ordering unit (pieces) RSSDD110000NN101F0RA Taping TL 2500  Data Sheet AEC-Q101 Qualified
 Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5
 Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE
 Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Sou.