RSD080N06 - ROHM

RSD080N06 MOSFET

Data Sheet 4V Drive Nch MOSFET RSD080N06  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) 4V drive. 3) High power package(CPT3).  Application Switching  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5  Packaging specifications Package.

Features

1) Low on-resistance. 2) 4V drive. 3) High power package(CPT3).
 Application Switching
 Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5
 Packaging specifications Package Type Code Basic ordering unit (pieces) RSD080N06 Taping TL 2500 
 Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP
*1 IS ISP
*1 PD
*2 Tch R.