RN2903AFS - Toshiba

RN2903AFS Silicon PNP Transistor

RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm • • • Incorporating a bias resistor into a transistor reduces the parts c.

Features

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2901AFS to 2906AFS RN2901AFS to 2906AFS RN2901AFS to 2904AFS RN2905AFS, 2906AFS Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −10 −5 −80 50 150 −55 to 150 Unit V V Equivalent Circuit (top view) 6 5 4 Q1 V mA mW °C °C 1 2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the re.