Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting In.
N2114MFV VCBO −50 V to Collector-emitter voltage RN2118MFV VCEO −50 V RN2114MFV −5 Emitter-base voltage RN2115MFV −6 RN2116MFV VEBO −7 V RN2117MFV −15 RN2118MFV −25 Collector current IC −100 mA Collector power dissipation RN2114MFV PC(Note1) 150 mW to Junction temperature RN2118MFV Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN2114 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 2 | RN2110 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 3 | RN2110MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 4 | RN2111 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 5 | RN2111MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 6 | RN2112 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 7 | RN2112MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 8 | RN2113 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 9 | RN2113MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 10 | RN2115 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 11 | RN2115MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 12 | RN2116 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|