RN1224 - Toshiba Semiconductor

RN1224 Silicon NPN Transistor

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA) l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of par.

Features

1-06-07 RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1221~1227 RN1221 RN1222 RN1223 Emitter cut-off current RN1224 RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC current gain RN1224 RN1225 RN1226 RN1227 Collector-emitter saturation voltage RN1221 RN1222~1227 RN1221 RN1222 RN1223 Input voltage (ON) RN1224 RN1225 RN1226 RN1227 RN1221~1224 Input voltage (OFF) RM1225, 1226 RN1227 Translation frequency Collector output capacitance RN1221~1227 RN1221~1227 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO T.