RN1207 - Toshiba

RN1207 Silicon NPN Transistor

RN1207~RN1209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1207,RN1208,RN1209 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2207~2209 Unit: mm Equivalent Circuit and Bias Res.

Features

RN1209 Collector-emitter saturation voltage RN1207 Input voltage (ON) RN1208 RN1209 RN1207 Input voltage (OFF) RN1208 RN1209 Translation frequency Collector output capacitance RN1207 Input resistor RN1208 RN1209 RN1207 Resistor Ratio RN1208 RN1209 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VCE = 5V, IC = 0.1mA VCE = 0.2V, IC = 5mA IC = 5mA, IB = 0.25mA VCE = 5V, IC = 10mA Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VEB = 7V, IC = 0 VE.