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MITSUBISHI FAST RECOVERY DIODE MODULES RM50DA/CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM50DA/CA/C1A-XXF DC current .... 50A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 • IDC • VRRM .
e class 12 600 720 480 16
* 800 960 640 20
* 1000 1100 800 24 1200 1350 960 Unit V V V
Conditions Resistive load, TC=105°C One half cycle at 60Hz, peak value Value for one cycle of surge current
Ratings 50 1000 4.2x103
–40~150
–40~125
Unit A A A2s °C °C V N
·m kg
·cm N
·m kg
·cm g
Charged part to case Main terminal screw M4
2500 0.98~1.47 10~15 1.47~1.96 15~20 90
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f)
*1 Parameter Repetitive reverse current Forward voltage Reverse recovery time Reverse recove.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RM50DA-XXS |
Mitsubishi Electric Semiconductor |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
|
| 2 | RM50D2Z-40 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 3 | RM50 |
relpol |
miniature relays |
|
| 4 | RM50-3011-85-1012 |
relpol |
miniature relays |
|
| 5 | RM500DZ-24 |
Mitsubishi |
DIODE MODULES |
|
| 6 | RM500DZ-2H |
Mitsubishi Electric Semiconductor |
DIODE MODULES |
|
| 7 | RM500DZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 8 | RM500DZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 9 | RM500HA-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 10 | RM500HA-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 11 | RM500HA-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 12 | RM500HA-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|