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MITSUBISHI FAST RECOVERY DIODE MODULES RM50DA/CA/C1A-XXS MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE RM50DA/CA/C1A-XXS DC current .... 50A Repetitive peak reverse voltage ....... 300/600V • trr Reverse recovery time ............. 0.4µs • Insulated Type • IDC • VRRM APPLICATION Free wheel use, Welder OUTL.
V N
·m kg
·cm N
·m kg
·cm g
Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolution voltage
One half cycle at 60Hz, peak value Value for one cycle of surge current
Charged part to case Main terminal screw M4
2500 0.98~1.47 10~15 1.47~1.96 15~20 90
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM VFM trr Qrr trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery time Reverse recovery charge Thermal.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RM50C1A-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|
| 2 | RM50CA-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|
| 3 | RM50CA-XXS |
Mitsubishi Electric Semiconductor |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
|
| 4 | RM50 |
relpol |
miniature relays |
|
| 5 | RM50-3011-85-1012 |
relpol |
miniature relays |
|
| 6 | RM500DZ-24 |
Mitsubishi |
DIODE MODULES |
|
| 7 | RM500DZ-2H |
Mitsubishi Electric Semiconductor |
DIODE MODULES |
|
| 8 | RM500DZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 9 | RM500DZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 10 | RM500HA-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 11 | RM500HA-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 12 | RM500HA-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|