1.5 GHz MICROWAVE RELAY RK-RELAYS 20.2 .795 11.2 .441 9.7 .382 • Excellent high frequency characteristics Isolation: Min. 60dB (at 1.5 GHz) Insertion loss: Max. 0.3dB (at 900 MHz) • V.S.W.R.: Max. 1.5 (at 900MHz) • High sensitivity in small size Size: 20.2 × 11.2 × 9.7 mm .795 × .441 × .382 inch Nominal power consumption: 200 mW (single side stable type).
tics
Initial insulation resistance
*1 Between open contacts Initial Between contact and coil breakdown 2 Between contact and voltage
* earth terminal Operate time [Set time]
*3 (at nominal voltage) Min. 100 MΩ at 500 V DC 500 Vrms 1,000 Vrms 500 Vrms Approx. 6 ms [Approx. 5ms]
Release time (without diode) [Reset time]
*3 Approx. 3 ms [Approx. 5ms] (at nominal voltage)
*2 Temperature rise Functional
*4 Destructive
*5 Functional
*6 Destructive Max. 60°Cwith nominal coil voltage across coil and at nominal switching capacity Min. 196 m/s2 {20 G} Min. 980 m/s2 {100 G} 10 to 55 Hz at double amplitude of 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RK1 |
KOA |
general purpose metal film leaded resistor | |
2 | RK1000 |
Rockchip |
digital-analog mixed chip | |
3 | RK117 |
Alps |
11mm Size Metal Shaft Low-profile Potentiometer | |
4 | RK1171114-F15 |
Alps |
11mm Size Metal Shaft Low-profile Potentiometer | |
5 | RK13 |
Sanken electric |
Schottky Barrier Diodes | |
6 | RK13 |
EIC discrete Semiconductors |
SCHOTTKY BARRIER RECTIFIER DIODES | |
7 | RK14 |
Sanken electric |
Schottky Barrier Diodes | |
8 | RK14 |
EIC discrete Semiconductors |
SCHOTTKY BARRIER RECTIFIER DIODES | |
9 | RK16 |
Sanken electric |
Schottky Barrier Diodes 60V | |
10 | RK16 |
EIC discrete Semiconductors |
SCHOTTKY BARRIER RECTIFIER DIODES | |
11 | RK168 |
ALPS |
16mm Size Motor-driven | |
12 | RK16812MG |
ALPS |
16mm Size Motor-driven |