RJK0365DPA - Renesas Technology

RJK0365DPA Silicon N Channel Power MOS FET Power Switching

www.DataSheet4U.com RJK0365DPA Silicon N Channel Power MOS FET Power Switching REJ03G1655-0300 Rev.3.00 Aug 05, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 .

Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V)
• Pb-free
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• Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage.