HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS RG-RELAYS 25 .984 19 .748 10.4 .409 25 .984 23 .906 9.9 .390 1 Form C • Excellent high frequency characteristics Isolation: Min. 65dB (at 900 MHz) Insertion loss: Max. 1.0 (at 900 MHz) • Wide selection Characteristic impedance: 50 Ω type and 75 Ω type Coil: Single side stable and latching type • 1 A 24 .
Max. 1 dB Max. 2.0
Characteristics
Initial insulation resistance
*1 Between open contacts Initial breakdown Between contacts and coil voltage
*2 Between contacts and earth terminal Operate time
*3 (at nominal voltage) Release time
*3 (at nominal voltage)(without diode) Set time
*3 (at nominal voltage) Reset time
*3 (at nominal voltage) Min. 100 MΩ at 500 V DC 1,000 Vrms 2,000 Vrms 500 Vrms
Coil (polarized) (at 25°C, 68°F)
Single side stable 1 coil latching 2 coil latching 1 Form C 350 mW 175 mW 350 mW 2 Form C 400 mW 200 mW 400 mW
Approx. 10 ms Approx. 5 ms Approx. 7 ms Approx. 7 ms Max. 55°C wit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RG10 |
Sanken electric |
Silicon Diode | |
2 | RG10 |
EIC discrete Semiconductors |
SUPER FAST RECTIFIER DIODES | |
3 | RG1005 |
susumu |
Resistor | |
4 | RG10A |
Sanken electric |
Silicon Diode | |
5 | RG10Y |
EIC |
SUPER FAST RECTIFIER DIODES | |
6 | RG10YA |
EIC |
SUPER FAST RECTIFIER DIODES | |
7 | RG110B |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER | |
8 | RG110D |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER | |
9 | RG110G |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER | |
10 | RG110J |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER | |
11 | RG110K |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER | |
12 | RG110M |
Zowie Technology |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER |