The RFPA2235 is a single-stage InGaP HBT power amplifier. It exhibits excellent back-off characteristics making it ideal for ultra-linear driver amplifier applications. The RFPA2235 can also be optimized for use as a small-cell PA output stage. External matching and bias control allows the RFPA2235 to be utilized across various radio platforms within 700MHz .
WCDMA Power at 2140MHz = 20dBm with -60dBc ACPR
Gain = 13dB at 2140MHz
P1dB = 32.5dBm at 2140MHz
Externally Matched
Power-down capability
Class 1C HBM ESD Rating
On-chip Input Power Detector
Applications
2G, 3G, and 4G Air Interfaces
Driver Amplifier for Commercial
Wireless Infrastructure
Picocell, Femtocell Power
Amplifier
WCDMA, LTE, TD-SCDMA, GSM
VBIAS 1 NC 2
RFIN 3 RFIN 4
NC 5 VREG 6
AMP
12 NC 11 RFOUT/VCC 10 RFOUT/VCC 9 RFOUT/VCC 8 RFOUT/VCC 7 VDET
Functional Block Diagram
Product Description
The RFPA2235 is a single-stage InGaP HBT power amplifier. It exhibits e.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFPA2224 |
RF Micro Devices |
Single-Stage Power Amplifier | |
2 | RFPA2226 |
RF Micro Devices |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER | |
3 | RFPA2002 |
RF Micro Devices |
Integrated Power Amplifier Module | |
4 | RFPA2005 |
RF Micro Devices |
Integrated Power Amplifier Module | |
5 | RFPA2013 |
RF Micro Devices |
GaAs HBT Power Amplifier | |
6 | RFPA2016 |
RF Micro Devices |
3-stage HBT power amplifier module | |
7 | RFPA2026 |
RF Micro Devices |
3-Stage Power Amplifier Module | |
8 | RFPA2089 |
RFMD |
InGaP HBT POWER AMPLIFIER | |
9 | RFPA2172 |
RF Micro Devices |
medium-power high efficiency amplifier IC | |
10 | RFPA2189 |
RF Micro Devices |
GaAs HBT POWER AMPLIFIER | |
11 | RFPA2189 |
qorvo |
400MHz to 2700 MHz 0.5W GaAs HBT Power Amplifier | |
12 | RFPA2545 |
RF Micro Devices |
Broadband 4W GaAs HBT Power Amplifier |