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RFG60P03 - Intersil Corporation

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RFG60P03 60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs

RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 File Number 3951.3 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They wer.

Features


• 60A, 30V
• rDS(ON) = 0.027Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG60P03 RFP60P03 RF1S60P03SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG60P03 RFP60P03 F1S60P03 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE .

The same part from a different manufacturer

Datasheet RFG60P03 - Fairchild Semiconductor RFG60P03

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. Th.

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