RFD14N05L - Fairchild Semiconductor

RFD14N05L N-Channel Logic Level Power MOSFET

Data Sheet RFD14N05L, RFD14N05LSM October 2013 N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for.

Features

• 14A, 50V
• rDS(ON) = 0.100Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain t.