RF501BM2S - Rohm

RF501BM2S Super Fast Recovery Diode

Super Fast Recovery Diode RF501BM2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions .

Features

1) Low switching loss 2) Low forward voltage
Construction Silicon epitaxial planar type ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date
Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3
Structure Cathode Open Anode
Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resistive load 5A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 40 A Operating junction temperat.