Numonyx® Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Datasheet Product Features High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and.
High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and continuous-word options for burst mode — 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer — Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer Architecture: — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte array blocks — Blank.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD48F3000P0ZBQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
2 | RD48F3000P0ZTQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
3 | RD48F3000P0ZTQE |
Numonyx |
Single Bit per Cell Single Bit per Cell | |
4 | RD48F2000P0ZBQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
5 | RD48F2000P0ZTQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
6 | RD48F4000P0ZBQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
7 | RD48F4000P0ZTQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
8 | RD48F4400P0VBQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
9 | RD48F4400P0VTQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
10 | RD48F4444PPVBQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
11 | RD48F4444PPVTQ0 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
12 | RD4.3E |
Excel Semiconductor |
Zener diode |