RD3S100CN Nch 190V 10A Power MOSFET VDSS RDS(on)(Max.) ID PD 190V 182mΩ ±10A 85W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching Power Supply lPackaging specifications .
1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching Power Supply lPackaging specifications Packing Embossed Tape Packing code TL1 Marking RD3S100CN Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy.
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD3S075CN |
INCHANGE |
N-Channel MOSFET | |
2 | RD3S075CN |
ROHM |
Power MOSFET | |
3 | RD3ST24 |
Renesas |
Standby Controller | |
4 | RD3.0E |
Excel Semiconductor |
Zener diode | |
5 | RD3.0E |
EIC |
SILICON ZENER DIODES | |
6 | RD3.0E |
NEC |
Zener Diode | |
7 | RD3.0E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES | |
8 | RD3.0EB |
SEMTECH |
ZENER DIODES | |
9 | RD3.0ES |
WEJ |
Zener diode | |
10 | RD3.0ES |
EIC |
ZENER DIODES | |
11 | RD3.0ES |
NEC |
Zener Diode | |
12 | RD3.0F |
EIC |
ZENER DIODES |