RD3H080SP Pch -45V -8A Power MOSFET Datasheet lOutline VDSS -45V RDS(on)(Max.) 91mΩ DPAK ID ±8A TO-252 PD 15W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tap.
1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Tape width (mm) Type Basic ordering unit (pcs)
16 2500
TL Taping code
TL1
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RD3H080SP
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-45
V
Continuous drain current
ID
*1
±8
A
Pulsed drain current
IDP
*2
±16
A
Gate - Source voltage
VGSS
±20
V.
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD3H045SP |
INCHANGE |
P-Channel MOSFET | |
2 | RD3H045SP |
ROHM |
Power MOSFET | |
3 | RD3H160SP |
ROHM |
Power MOSFET | |
4 | RD3H160SP |
INCHANGE |
P-Channel MOSFET | |
5 | RD3H200SN |
INCHANGE |
N-Channel MOSFET | |
6 | RD3H200SN |
ROHM |
Power MOSFET | |
7 | RD3.0E |
Excel Semiconductor |
Zener diode | |
8 | RD3.0E |
EIC |
SILICON ZENER DIODES | |
9 | RD3.0E |
NEC |
Zener Diode | |
10 | RD3.0E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES | |
11 | RD3.0EB |
SEMTECH |
ZENER DIODES | |
12 | RD3.0ES |
WEJ |
Zener diode |