RD3G03BAT Pch -40V -35A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -40V 19.1mΩ ±35A 56W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lOutline DPAK TO-252 lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Switching T.
1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lOutline DPAK TO-252 lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD3G01BAT |
ROHM |
Power MOSFET | |
2 | RD3G400GN |
INCHANGE |
N-Channel MOSFET | |
3 | RD3G400GN |
ROHM |
Power MOSFET | |
4 | RD3G500GN |
ROHM |
Power MOSFET | |
5 | RD3G500GN |
INCHANGE |
N-Channel MOSFET | |
6 | RD3G600GN |
ROHM |
Power MOSFET | |
7 | RD3G600GN |
INCHANGE |
N-Channel MOSFET | |
8 | RD3.0E |
Excel Semiconductor |
Zener diode | |
9 | RD3.0E |
EIC |
SILICON ZENER DIODES | |
10 | RD3.0E |
NEC |
Zener Diode | |
11 | RD3.0E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES | |
12 | RD3.0EB |
SEMTECH |
ZENER DIODES |