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RD3.3E - Excel Semiconductor

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RD3.3E Zener diode

RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRS.

Features

1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRSM 100 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -65~+175 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended expo.

The same part from a different manufacturer

Datasheet RD3.3E - Renesas RD3.3E

These products are zener diodes with an allowable dissipation of 500 mW and a planar type glass sealed DHD (double heats.

Datasheet RD3.3E - NEC RD3.3E

NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diod.

Datasheet RD3.3E - EIC RD3.3E

RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipati.

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