Type RD2.0S to RD150S series are 2 pin super mini mold package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indicati.
• Sharp breakdown characteristic
• VZ: Applied E24 standard
APPLICATIONS
Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc.
PACKAGE DRAWING (Unit: mm)
2.5±0.15 1.7±0.1
Cathode Indication
+0.05 −0.01
0.19 0.9±0.1
0.3±0.05 1.25±0.1
0.11
0±0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P 200
Forward Current
IF 100
Reverse Surge Power
PRSM
85
Junction Temperature
Tj 150
Storage Temperature
Tstg
–55 to +150
mW mA W °C °C
(at t = 10 μs/ 1 pulse) Show Fig.12
The information in this document is subject to change without notice. Bef.
Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD120E |
NEC |
500 mW DHD ZENER DIODE DO-35 | |
2 | RD120E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES | |
3 | RD120EB |
SEMTECH |
ZENER DIODES | |
4 | RD120FM |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES | |
5 | RD120FM |
Renesas |
ZENER DIODES | |
6 | RD12E |
Excel Semiconductor |
Zener diode | |
7 | RD12E |
EIC |
SILICON ZENER DIODES | |
8 | RD12E |
NEC |
500 mW DHD ZENER DIODE DO-35 | |
9 | RD12E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES | |
10 | RD12EB |
SEMTECH |
ZENER DIODES | |
11 | RD12ES |
WEJ |
Zener diode | |
12 | RD12ES |
EIC |
ZENER DIODES |