STRUTURE AND DIMENSIONS Glass Coating l1 l1 RuO2 Type Resistor H Alumina Substrate l2 Thick-Film Electrode L Special Plating l2 W (UNIT : mm ) Type RC1005(1/16W ) RC1608(1/10W) RC2012( 1/8W ) RC3216( 1/4W) RC3225( 1/4W ) RC5025( 1/2W ) RC6432( 1W ) 1.60 L 1.00 0.05 0.10 2.00 0.20 3.20 0.20 3.20 0.20 5.00 0.15 6.30 0.15 W 0.50 0.05 0.80 0.15 1.25 0.15 1.
Available in use of function trimming. Compatible with both wave and reflow soldering. Highly stable in auto-placement surface mounting application. Excellent eletrical characteristic. DIMENSIONS X, Y : Trimming area (Unit : mm) TYPE RT1608 RT2012 RT3216 L 1.60 0.10 2.00 0.20 3.20 0.20 W 0.80 0.15 1.25 0.15 1.60 0.15 H 0.45 0.10 0.50 0.10 0.55 0.10 I1 0.30 0.20 0.40 0.20 0.45 0.20 I2 0.35 0.10 0.35 0.20 0.40 0.20 X 0.50 0.10 0.70 0.10 1.30 0.10 Y 0.40 0.10 0.60 0.10 1.00 0.10 7 GENERAL SPECIFICATION RT 2012 M 100 CS Code Designation Trimmable Chip Resistor Dimension Code Designa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RC1005F100AS |
ETC |
THICK FILM CHIP RESISTORS | |
2 | RC1005F100BS |
ETC |
THICK FILM CHIP RESISTORS | |
3 | RC1005F100CS |
ETC |
THICK FILM CHIP RESISTORS | |
4 | RC1005 |
Samsung |
Thick Film Chip Resistors | |
5 | RC1002-A |
OKAYA |
LCD | |
6 | RC10S01 |
Shanghai Sunrise Electronics |
SILICON SILASTIC CELL RECTIFIER | |
7 | RC10S01G |
Shanghai Sunrise Electronics |
SILICON GPP CELL RECTIFIER | |
8 | RC10S02 |
Shanghai Sunrise Electronics |
SILICON SILASTIC CELL RECTIFIER | |
9 | RC10S02G |
Shanghai Sunrise Electronics |
SILICON GPP CELL RECTIFIER | |
10 | RC10S04 |
Shanghai Sunrise Electronics |
SILICON SILASTIC CELL RECTIFIER | |
11 | RC10S04G |
Shanghai Sunrise Electronics |
SILICON GPP CELL RECTIFIER | |
12 | RC10S06 |
Shanghai Sunrise Electronics |
SILICON SILASTIC CELL RECTIFIER |