RBR30T40ANZ - ROHM

RBR30T40ANZ Schottky Barrier Diode

Schottky Barrier Diode RBR30T40ANZ Application General rectification Dimensions (Unit : mm) 4.5±00..31 10.0±00..31 φ3.2±0.2 2.8±00..21 Datasheet Structure 15.0±00..24 12.0±0.2 Features 1) Cathode common dual type 2) High reliability 3) Low VF 1.2 1.3 0.8 1 5.0±0.2 8.0±0.2 2.6±0.5 14.0±0.5 Construction Silicon epitaxial planar type 2.45±0.

Features

1) Cathode common dual type 2) High reliability 3) Low VF 1.2 1.3 0.8 1 5.0±0.2 8.0±0.2 2.6±0.5 14.0±0.5
Construction Silicon epitaxial planar type 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 0.75±00..015 1 : Manufacture date (1) (2) (3) Anode Cathode Anode
Package Dimensions (Unit : mm) 7 540 34.5
Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak VRM VR Io IFSM Operating Junction Temperature Storage Temperature Tj Tstg Conditions Duty≦0.5 Dir.