RB751L-40 - GME

RB751L-40 Schottky Barrier Diode

Schottky Barrier Diode FEATURES  High reliability.  Low voltage; Low inductance.  Low VF. APPLICATIONS  Low current rectification. Pb Lead-free Production specification RB751L-40 ORDERING INFORMATION Type No. Marking RB751L-40 5 DFN1006-2 Package Code DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak r.

Features

 High reliability.
 Low voltage; Low inductance.
 Low VF. APPLICATIONS
 Low current rectification. Pb Lead-free Production specification RB751L-40 ORDERING INFORMATION Type No. Marking RB751L-40 5 DFN1006-2 Package Code DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 45 DC reverse voltage VR 40 Mean rectifying current IO 30 Peak forward surge current IFSM 200 Junction temperature Tj 125 Storage temperature Tstg -40 to +125 Unit V V mA mA ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specifie.