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RB731U Diodes Schottky barrier diode RB731U !Applications High speed switching. !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 1.1 +0.2 −0.1 1.6 +0.1 0.3 − 0.05 +0.1 0.15 − 0.06 !Construction Silicon epitaxial planar ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse vo.
1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation. 0.95 0.95 0.8±0.1 2.8±0.2 +0.2 −0.1 0∼0.1 RB731U Diodes !Electrical characteristic curves (Ta=25°C) Typ. pulse measurement FORWARD CURRENT : IF (A) Ta=125˚C CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000m 100m 10m Ta=125˚C 1m 100µ 10µ 1µ 0 Ta=75˚C Ta=25˚C Ta=−25˚C 100µ 100 50 REVERSE CURRENT : IR (A) 10µ Ta=75˚C 1µ Ta=25˚C 20 10 5 100n Ta=−25˚C 10n 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (.
RB731U - Pan Jit International
RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES This device features three electrically-isolated Schottky diodes housed in .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RB731UTW |
Pan Jit International |
SURFACE MOUNT TRIPLE SCHOTTKY DIODES |
|
| 2 | RB731XN |
JCST |
SCHOTTKY BARRIER DIODE |
|
| 3 | RB731XN |
GME |
Surface Mount Schottky Barrier Diodes |
|
| 4 | RB731XN |
LGE |
Surface Mount Schottky Barrier Diodes |
|
| 5 | RB731XN |
Rohm |
Schottky barrier diode |
|
| 6 | RB731XN |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY |
|
| 7 | RB705D |
Rohm |
Schottky barrier diode |
|
| 8 | RB706D-40 |
Rohm |
Schottky barrier diode |
|
| 9 | RB706D-40 |
Guangdong Kexin |
Schottky barrier diode |
|
| 10 | RB706F-40 |
SEMTECH |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
|
| 11 | RB706F-40 |
LGE |
Schottky Barrier Diodes |
|
| 12 | RB706F-40 |
Taiwan Semiconductor |
Schottky Barrier Diode |
|