Schottky Barrier Diode RB706WM-40 Data Sheet lApplication High speed switching lFeatures 1) Small mold type (EMD3F) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 1.60±0.1 0.70±0.10 0.26 +0.10 -0.05 Each lead has same dimensions (3) lLand Size Figure (Unit : mm) 0.5 0.5 0.7 0.7 0.7 1.3 0.45±.
1) Small mold type (EMD3F) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 1.60±0.1 0.70±0.10 0.26 +0.10 -0.05 Each lead has same dimensions (3) lLand Size Figure (Unit : mm) 0.5 0.5 0.7 0.7 0.7 1.3 0.45±0.10 (0.37) 1.6±0.10 0.86±0.10 3J (0.37) (1) (0.5) (0.5) 1.00±0.10 (2) ROHM : EMD3F JEDEC : SOT-416FL JEITA : SC-89 : Year, week and factory 0.45±0.10 0~0.10 EMD3F 0.6 0.6 lStructure (3) (1) Anode (2) Cathode (3) Cathode/ (1) (2) Anode lTaping Dimensions (Unit : mm) TL lAbsolute Maximum Ratings (Tc= 25°C) Par.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB706W-40 |
Rohm |
Schottky Barrier Diode | |
2 | RB706D-40 |
Rohm |
Schottky barrier diode | |
3 | RB706D-40 |
Guangdong Kexin |
Schottky barrier diode | |
4 | RB706F-40 |
SEMTECH |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | |
5 | RB706F-40 |
LGE |
Schottky Barrier Diodes | |
6 | RB706F-40 |
Taiwan Semiconductor |
Schottky Barrier Diode | |
7 | RB706F-40 |
JCET |
Schottky barrier Diode | |
8 | RB706F-40 |
Rohm |
Schottky barrier diode | |
9 | RB706F-40 |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
10 | RB706F-40 |
GME |
Schottky Barrier Diode | |
11 | RB706F-40 |
LITE-ON |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
12 | RB706F-40 |
MCC |
Schottky Barrier Diode |