RB558VA150FH - ROHM

RB558VA150FH Schottky Barrier Diode

Data Sheet Schottky Barrier Diode RRBB5585V8VAA15105F0H AEC-Q101 Qualified lApplications General rectification lFeatures lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 for lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified ed lConstruction end ns Silicon epi.

Features

lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 for lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified ed lConstruction end ns Silicon epitaxial TUMD2 lStructure 0.8±0.05 ROHM : TUMD2 Manufacture Date 0.6±0.2 　　　 0.1 lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 commDesig 1.43±0.05 e w lAbsolute Maximum Ratings(Ta=25°C) R e Parameter Reverse voltage (repetitive) t N Reverse voltage (DC) o Average rectified forward current (
*1) NForward current surg.