Schottky barrier diode RB521S-40 Applications Rectifying small power Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Data Sheet Land size figure (Unit : mm) 0.8 0.6 1.7 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 1.2±0.05 1.6±0.1 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot .
1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability
Construction Silicon epitaxial planar
1.2±0.05 1.6±0.1
0.3±0.05
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79
dot (year week factory)
0.6±0.1
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05 φ1.55±0.05
EMD2
Structure
0.2±0.05
1.75±0.1
0.6 3.5±0.05 8.0±0.15
11..22560±.0.0065 00
2.2.4405±±0.0.015 11..235±0..0066
0
00.9.905±±0.005.06 0
Empty pocket 4.0±0.1
2.0±0.05
φ0.5
0.2 00.7.756±±0.005.05
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC) .
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB521S-40 SCHOTTKY BARRIER DIODE .
SYMBOL Repetitive Peak Reverse Voltage VRRM Continuous Reverse Voltage Mean Rectifying Current VR IO Peak Forward .
Cathode Anode 12 Z Top View Marking Code: "Z" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB521S-40C2 |
CYStech Electronics |
Small Signal Schottky diode | |
2 | RB521S-30 |
JCET |
Schottky barrier Diode | |
3 | RB521S-30 |
Rohm |
Schottky barrier diode | |
4 | RB521S-30 |
JGD |
Silicon Epitaxial Planar Schottky Barrier Diode | |
5 | RB521S-30 |
AiT Components |
SCHOTTKY DIODES | |
6 | RB521S-30 |
Crownpo |
Schottky barrier Diodes | |
7 | RB521S-30 |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
8 | RB521S-30 |
Comchip |
SMD Schottky Barrier Diodes | |
9 | RB521S-30 |
YS |
Schottky Barrier Diode | |
10 | RB521S-30 |
TIPTEK |
SURFACE MOUNT SCHOTTKY DIODES | |
11 | RB521S-30 |
GME |
Schottky Barrier Diode | |
12 | RB521S-30 |
MDD |
Schottky Barrier Diode |