www.DataSheet4U.com Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) zFeatures 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol.
1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V µA IF=10mA VR=10V Conditions www.rohm.com ©2009 ROHM C.
RB521CS-30 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 Volts Forward Current - 100 mAmpere FEATURES ●.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes RB521CS-30 Schottky barrier diode.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB521CS30L |
nexperia |
MEGA Schottky barrier rectifier | |
2 | RB521CS30L |
NXP Semiconductors |
100 mA low VF MEGA Schottky barrier rectifier | |
3 | RB521C30 |
WillSEMI |
Schottky Barrier Diode | |
4 | RB521D |
Formosa MS |
SMD Small Signal Schottky Diode | |
5 | RB521D |
CITC |
100mA Surface Mount Small Signal Diodes | |
6 | RB521ES-30 |
Rohm |
Schottky Barrier Diode | |
7 | RB521G |
Formosa MS |
Small Signal Schottky Diode | |
8 | RB521G |
CITC |
100mA Surface Mount Small Signal Diodes | |
9 | RB521G-30 |
Pan Jit International |
SCHOTTKY BARRIER DIODE | |
10 | RB521G-30 |
SEMTECH |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | |
11 | RB521G-30 |
JCET |
Schottky barrier Diode | |
12 | RB521G-30 |
MCC |
Schottky Barrier Diode |