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Schottky barrier diode RB520CS-30 zApplications Low current rectification z Dimensions (Unit : mm) zFeatures 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. zConstruction Silicon epitaxial planar 0.45 0.45 0.5 z Land size figure (Unit : mm) 0.55 VMN2 zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°.
1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. zConstruction Silicon epitaxial planar 0.45 0.45 0.5 z Land size figure (Unit : mm) 0.55 VMN2 zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak （60Hz/1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.45 IR - - 0.
RB520CS-30 - JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes RB520CS-30 Schottky barrier diode.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RB520CS3002L |
nexperia |
VF MEGA Schottky barrier rectifier |
|
| 2 | RB520CS30L |
nexperia |
MEGA Schottky barrier rectifier |
|
| 3 | RB520CM-60 |
Rohm |
Schottky Barrier Diode |
|
| 4 | RB520AS-30 |
ROHM |
Schottky Barrier Diode |
|
| 5 | RB520D |
Formosa MS |
SMD Schottky Barrier Diode |
|
| 6 | RB520D |
CITC |
100mA Surface Mount Small Signal Diodes |
|
| 7 | RB520G |
CITC |
100mA Surface Mount Small Signal Diodes |
|
| 8 | RB520G |
Formosa MS |
Small Signal Schottky Diode |
|
| 9 | RB520G-30 |
JCET |
SCHOTTKY BARRIER DIODE |
|
| 10 | RB520G-30 |
Rohm |
Schottky barrier diode |
|
| 11 | RB520G-30 |
Taiwan Semiconductor |
Low VF SMD Schottky Barrier Diode |
|
| 12 | RB520G-30 |
Pan Jit International |
SCHOTTKY BARRIER DIODE |
|