Schottky Barrier Diode RB168L100 Application General rectification Dimensions (Unit : mm) 2.6±0.15 Datasheet Land Size Figure (Unit : mm) 2.0 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Features 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD.
1) Small power mold type
(PMDS) 2) High reliability 3) Super low IR
Construction Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS JEDEC : SOD-106
1 2 : Manufacture Date
Taping Dimensions (Unit : mm)
2.0±0.05 4.0±0.1
PMDS
Structure
φ11..5555±00..0055
Cathode
Anode
0.3
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
100 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB168L100DD |
ROHM |
Schottky Barrier Diode | |
2 | RB168L150 |
ROHM |
Schottky Barrier Diode | |
3 | RB168L-30 |
ROHM |
Schottky Barrier Diode | |
4 | RB168L-40 |
Rohm |
Schottky Barrier Diode | |
5 | RB168L-60 |
Rohm |
Schottky Barrier Diode | |
6 | RB168LAM-30 |
ROHM |
Schottky Barrier Diode | |
7 | RB168LAM-40 |
ROHM |
Schottky Barrier Diode | |
8 | RB168LAM-60 |
ROHM |
Schottky Barrier Diode | |
9 | RB168LAM100 |
ROHM |
Schottky Barrier Diode | |
10 | RB168LAM150 |
ROHM |
Schottky Barrier Diode | |
11 | RB168M-40 |
Rohm |
Schottky Barrier Diode | |
12 | RB168M-40TF |
ROHM |
Schottky Barrier Diode |