RB161L-40 Diodes Schottky barrier diode RB161L-40 zApplications High frequency rectification For switching power supply zExternal dimensions (Units : mm) 1.5±0.2 zFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF.( VF=0.35V Typ. at 1A) 3) VRM=40V guaranteed. CATHODE MARK 4.5±0.2 1.2±0.3 3 3 0.1 +0.02 −0.1 2.0±0.2 2.6±0.2 zConstruction Si.
1) Compact power mold type. (PMDS) 2) Ultra low VF.( VF=0.35V Typ. at 1A) 3) VRM=40V guaranteed. CATHODE MARK 4.5±0.2 1.2±0.3 3 3 0.1 +0.02 −0.1 2.0±0.2 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Date of manufacture EX. 1999.12 → 9, C zAbsolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature ∗ When mounting on PCB Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 1 70 125 −40∼+125 Unit V V A A ˚C ˚C zElectrical characteristic.
RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Fe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB161M-20 |
Rohm |
Schottky barrier diode | |
2 | RB161MM-20 |
Rohm |
Schottky Barrier Diode | |
3 | RB161QS-40 |
ROHM |
Schottky Barrier Diode | |
4 | RB161SS-20 |
Rohm |
Schottky Barrier Diode | |
5 | RB161SS-30 |
Rohm |
Schottky Barrier Diode | |
6 | RB161VA-20 |
Rohm |
Schottky Barrier Diode | |
7 | RB161VAM-20 |
ROHM |
Schottky Barrier Diode | |
8 | RB160A30 |
Rohm |
Schottky barrier diode | |
9 | RB160A40 |
Rohm |
Schottky barrier diode | |
10 | RB160A60 |
Rohm |
Schottky barrier diode | |
11 | RB160A90 |
Rohm |
Schottky barrier diode | |
12 | RB160L |
Rohm |
Schottky barrier diode |