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R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.130Ω ID ±30A TO-3PF PD 120W lInner circuit lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoH.
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) - Type Quantity (pcs) 300 Taping code C17 Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6030ENZ Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage TC = 25°C TC = 100°C static AC(f＞.
R6030ENZ - INCHANGE
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R6030ENX |
ROHM |
Power MOSFET |
|
| 2 | R6030ENX |
INCHANGE |
N-Channel MOSFET |
|
| 3 | R6030ENZ1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | R6030ENZ1 |
ROHM |
Power MOSFET |
|
| 5 | R6030422 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 6 | R6030425 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 7 | R6030435 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 8 | R6030622 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 9 | R6030625 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 10 | R6030635 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 11 | R6030822 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|
| 12 | R6030825 |
Powerex Power Semiconductors |
Fast Recovery Rectifier |
|