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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operatin.
·Drain Current
–ID=6A@ TC=25℃
·Drain Source Voltage-
: VDSS=600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 936mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Pluse
18
A
PD
Total Dissipation @TC=25℃
86
W
TJ
Max. .
R6006JNJ - ROHM
R6006JNJ Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R6006JND3 |
ROHM |
Power MOSFET |
|
| 2 | R6006JND3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | R6006JNX |
ROHM |
Power MOSFET |
|
| 4 | R6006JNX |
INCHANGE |
N-Channel MOSFET |
|
| 5 | R6006AND |
Rohm |
Nch 600V 6A Power MOSFET |
|
| 6 | R6006ANX |
Rohm |
Nch 600V 6A Power MOSFET |
|
| 7 | R6006KND3 |
ROHM |
Power MOSFET |
|
| 8 | R6006KND3 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | R6006KNX |
ROHM |
Power MOSFET |
|
| 10 | R6006KNX |
INCHANGE |
N-Channel MOSFET |
|
| 11 | R6006PND3FRA |
ROHM |
Power MOSFET |
|
| 12 | R600 |
Powerex Power Semiconductors |
General Purpose Rectifier |
|