R5011ANX - Rohm

R5011ANX 10V Drive Nch MOSFET

Transistors 10V Drive Nch MOSFET R5011ANX R5011ANX zStructure Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V. 4) Drive circuits can be simple. 5) Parallel use is easy. zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 (1)Base (2)Collector (3)Em.

Features

1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V. 4) Drive circuits can be simple. 5) Parallel use is easy. zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 (1)Base (2)Collector (3)Emitter 14.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 2.6 zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) R5011ANX Bulk − 500 zInner circuit zAbsolute maximum ratings (Ta=25qC) Parameter Symbol Limits Drain-source voltage VDSS 500 Gate-source voltage Drain current Source curre.