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YANGZHOU POSITIONING TECH. CO., LTD HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS R2619ZC21J Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) 2100 210.
. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) 2100 2100 VRSM (1) 2200 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage IRRM / IDRM Critical rate of voltage rise dV/dt (4) 20 mA 200 mA (3) 200 V/sec Notes: All ratings are specified for Tj=25 oC unless otherwise .
R2619ZC21J - IXYS
Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R2619ZC21K |
IXYS |
Distributed Gate Thyristor |
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| 2 | R2619ZC21L |
IXYS |
Distributed Gate Thyristor |
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| 3 | R2619ZC20J |
IXYS |
Distributed Gate Thyristor |
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| 4 | R2619ZC20K |
IXYS |
Distributed Gate Thyristor |
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| 5 | R2619ZC20L |
IXYS |
Distributed Gate Thyristor |
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| 6 | R2619ZC22J |
IXYS |
Distributed Gate Thyristor |
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| 7 | R2619ZC22K |
IXYS |
Distributed Gate Thyristor |
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| 8 | R2619ZC22L |
IXYS |
Distributed Gate Thyristor |
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| 9 | R2619ZC24J |
IXYS |
Distributed Gate Thyristor |
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| 10 | R2619ZC24K |
IXYS |
Distributed Gate Thyristor |
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| 11 | R2619ZC24L |
IXYS |
Distributed Gate Thyristor |
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| 12 | R2619ZC25J |
IXYS |
Distributed Gate Thyristor |
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