R1LV0416DSB-5SI - Renesas

R1LV0416DSB-5SI 4M SRAM

The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1L.

Features

• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output.  Three state output
• Battery backup operation.  2 chip selection for battery backup
• Temperature Range: -40 to +85°C Rev.1.00, May.24.2007, page 1 of 15 R1LV0416D Series Ordering Information Type No. R1LV0416DSB-5SI R1LV0416DSB-7LI R1LV0416DBG-5SI R1LV0416DBG-7LI Access time 55 ns 70 ns 55 ns 70 ns 400-mil 44-pin plastic TSOP II PTSB0044GA-A (44P3W-H) 48-ball CSP with 0.75 mm ball pitch PTBG0048HB.