The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, b.
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• Single 2.7~3.6V power supply Small stand-by current: 1µA (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1# and CS2 Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus
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R10DS0049EJ0200 Rev.2.00 2011.01.14
Page 1 of 15
R1LV0108E Series
Ordering Information
Orderable Part Name R1LV0108ESP-5SR#B0
Access time 55 ns
Temperature Range 0 ~ +70°C -40 ~ +85°C
Package
Shipping Container
Quantity
R1LV0108ESP-5SI#B0 R1LV0108ESP-7SR#B0 70 ns R1LV0108ESP-7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R1LV0408CSA-5SI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
2 | R1LV0408CSA-7LI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
3 | R1LV0408CSB-5SI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
4 | R1LV0408CSB-7LI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
5 | R1LV0408CSP-5SI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
6 | R1LV0408CSP-7LI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
7 | R1LV0408D |
Renesas |
4M SRAM | |
8 | R1LV0414D |
Renesas |
4M SRAM | |
9 | R1LV0414DSB-5SI |
Renesas |
4M SRAM | |
10 | R1LV0414DSB-7LI |
Renesas |
4M SRAM | |
11 | R1LV0414DSB-7LI |
Renesas |
4M SRAM | |
12 | R1LV0416C-I |
Renesas Technology |
Wide Temperature Range Version 4M SRAM |