The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packag.
• Single 5 V supply: 5 V ± 10%
• Access time: 55/70 ns (max)
• Power dissipation:
Active: 10 mW/MHz (typ) Standby: 4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output. Three state output
• Directly TTL compatible. All inputs and outputs
• Battery backup operation.
• Operating temperature: −40 to +85°C
Rev.2.00, May.26.2004, page 1 of 12
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R1LP0408CSP-5SC |
Renesas |
4M SRAM | |
2 | R1LP0408CSP-7LC |
Renesas |
4M SRAM | |
3 | R1LP0408CSP-7LI |
Renesas |
4M SRAM | |
4 | R1LP0408CSB-5SC |
Renesas |
4M SRAM | |
5 | R1LP0408CSB-5SI |
Renesas |
4M SRAM | |
6 | R1LP0408CSB-7LC |
Renesas |
4M SRAM | |
7 | R1LP0408CSB-7LI |
Renesas |
4M SRAM | |
8 | R1LP0408CSC-5SC |
Renesas |
4M SRAM | |
9 | R1LP0408CSC-5SI |
Renesas |
4M SRAM | |
10 | R1LP0408CSC-7LC |
Renesas |
4M SRAM | |
11 | R1LP0408CSC-7LI |
Renesas |
4M SRAM | |
12 | R1LP0108E |
Renesas Technology |
1Mb Advanced LPSRAM (128k word x 8bit) |