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IDTQS3VH245 • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions – No DC path to VCC or GND – 5V tolerant in OFF and ON state • 5V tolerant I/Os • Low RON - 4Ω typical • Flat RON characteristics over operating range • Rail-to-rail switching 0 - 5V • Bidirectional dataflow with near-zero delay: no added ground boun.
DESCRIPTION:
IDTQS3VH245
• N channel FET switches with no parasitic diode to VCC
– Isolation under power-off conditions
– No DC path to VCC or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low RON - 4Ω typical
• Flat RON characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground bounce
• Excellent RON matching between channels
• VCC operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | QS3VH245 |
Renesas |
2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH |
|
| 2 | QS3VH244 |
Renesas |
2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH |
|
| 3 | QS3VH2245 |
Renesas |
2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH |
|
| 4 | QS3VH251 |
Renesas |
2.5V / 3.3V 8:1 MUX / DEMUX HIGH BANDWIDTH BUS SWITCH |
|
| 5 | QS3VH253 |
Renesas |
2.5V / 3.3V DUAL 4:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH |
|
| 6 | QS3VH257 |
Renesas |
2.5V/3.3V QUAD 2:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH |
|
| 7 | QS3VH257QG |
Integrated Device Technology |
2.5V/3.3V QUAD 2:1 MUX/DEMUX HIGH BAND WIDTH BUS SWITCH |
|
| 8 | QS3VH2861 |
Renesas |
HIGH BANDWIDTH SWITCH |
|
| 9 | QS3VH125 |
Renesas |
HIGH BANDWIDTH BUS SWITCH |
|
| 10 | QS3VH126 |
Renesas |
HIGH BANDWIDTH SWITCH |
|
| 11 | QS3VH16210 |
Renesas |
HIGH BANDWIDTH BUS SWITCH |
|
| 12 | QS3VH16211 |
Renesas |
2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH |
|