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10–12 GHz 100 Watt GaN Power Amplifier (20 pcs.) QPM1021 Samples (2 pcs.) QPM1021 Evaluation Board Data Sheet Rev. G, August 2023 | Subject to change without notice 1 of 16 www.qorvo.com QPM1021 ® 10 – 12 GHz 100 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain Voltage (VD) 29.5 V Gate Voltag.
• Frequency Range: 10
– 12 GHz
• PSAT: > 50 dBm (PIN = 28 dBm)
• PAE: > 32% (PIN = 28 dBm)
• Large Signal Gain: > 20 dB (PIN = 28 dBm)
• Small Signal Gain: > 26 dB
• Bias: VD = 28 V, IDQ = 2.0 A
• Package Dimensions: 19.05 x 19.05 x 4.52 mm
• Performance Under Pulsed Operation
Functional Block Diagram
1 2 RF IN 3 4 5
10
9 8 RF OUT 7 6
Performance is typical across frequency. Please reference electrical specification table and data plots for more details.
Applications
• Radar
• Electronic Warfare
Top View
Ordering Information
Part No. QPM1021 QPM1021S2 QPM1021EVB
Description 10
–12 GHz 10.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | QPM1000 |
TriQuint Semiconductor |
2-20 GHz Limiter/Low-Noise Amplifier |
|
| 2 | QPM2101 |
Qorvo |
Multi-Chip T/R Module |
|
| 3 | QPM2239 |
qorvo |
13 - 15.5GHz 80W GaN Power Amplifier Module |
|
| 4 | QP-5515 |
Electus Distribution |
DOT MATRIX LIQUID CRYSTAL DISPLAY MODULE |
|
| 5 | QP12W08S-37 |
MORNSUN |
IGBT Driver |
|
| 6 | QP25 |
Mazda |
Battery Double Pentode Output Valve |
|
| 7 | QP26LS31 |
QP Semiconductor |
Quad High Speed Differential Line Driver |
|
| 8 | QP26LS32 |
QP Semiconductor |
Quad Differential Line Receiver |
|
| 9 | QP26LS33 |
QP Semiconductor |
Quad Differential Line Receiver |
|
| 10 | QP27C128 |
QP Semiconductor |
128 Kilobit (16K x 8) CMOS EPROM |
|
| 11 | QP27C256 |
QP Semiconductor |
256 Kilobit (32K x 8) CMOS EPROM |
|
| 12 | QP27C256L |
QP Semiconductor |
256 Kilobit (32K x 8) CMOS EPROM |
|