Qorvo's QPA2211 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31 GHz, it achieves 5 W linear power with lower than −25 dBc intermodulation distortion products and 24 dB small signal gain. Saturated output power is greater than 10 W with and associated poweradded efficiency of 25%. QPA2211 is pac.
• Frequency Range: 27.5
– 31 GHz
• PSAT (PIN = 24 dBm): 41 dBm
• PAE (PIN = 24 dBm): 25 %
• Power Gain (PIN = 24 dBm): 17 dB
• Small Signal Gain: 24 dB
• IMD3 (POUT = 34 dBm/tone): −25 dBc
• Bias: VD = 22 V, IDQ = 280 mA
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
• Package base is pure Cu offering superior thermal
management
Functional Block Diagram
Performance is typical across frequency. Please reference electrical specification table and data plots for more details
1
10 Applications
2
9
3
8
• 5G Infrastructure
4
7
• Satellite Communications
5
6
Ordering Information
Part No.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | QPA2210D |
Qorvo |
7 Watt GaN Power Amplifier | |
2 | QPA2211D |
Qorvo |
14 Watt GaN Power Amplifier | |
3 | QPA2213 |
Qorvo |
GaN Amplifier | |
4 | QPA2226D |
Qorvo |
20 Watt GaN Power Amplifier | |
5 | QPA2229D |
Qorvo |
13 Watt GaN Power Amplifier | |
6 | QPA2237 |
TriQuint Semiconductor |
10W GaN Power Amplifier | |
7 | QPA2040D |
Qorvo |
2 Watt GaN Power Amplifier | |
8 | QPA2363C |
qorvo |
50 MHz - 4000 MHz Active Bias Cascadable SiGe HBT | |
9 | QPA2575 |
Qorvo |
3 Watt Power Amplifier | |
10 | QPA2609 |
Qorvo |
Low Noise Amplifier | |
11 | QPA2626 |
TriQuint Semiconductor |
GaAs Low Noise Amplifier | |
12 | QPA2626D |
Qorvo |
17 - 23GHz Low Noise Amplifier |