MITSUBISHI TRANSISTOR MODULES QM50HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-H • • • • • IC Collector current ........... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo .
n temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500
–40~+150
–40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 Unit V V V V A A W A A °C °C V N
·m kg
·cm N
·m kg
·cm g
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat)
–VCEO hFE ton ts tf Rth .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | QM50HA-HB |
Mitsubishi Electric Semiconductor |
Transistor | |
2 | QM50HY-2H |
Mitsubishi Electric Semiconductor |
Transistor | |
3 | QM500 |
Mitsubishi Electric Semiconductor |
Transistor | |
4 | QM500HA-H |
Mitsubishi Electric Semiconductor |
Transistor | |
5 | QM50CY-H |
Mitsubishi Electric Semiconductor |
Transistor | |
6 | QM50DY-24 |
Mitsubishi Electric Semiconductor |
Transistor | |
7 | QM50DY-24B |
Mitsubishi Electric Semiconductor |
Transistor | |
8 | QM50DY-2H |
Mitsubishi Electric Semiconductor |
Transistor | |
9 | QM50DY-H |
Mitsubishi Electric Semiconductor |
Transistor | |
10 | QM50DY-HB |
Mitsubishi Electric Semiconductor |
Transistor | |
11 | QM50E2Y |
Mitsubishi Electric Semiconductor |
Transistor | |
12 | QM50TB-24 |
Mitsubishi Electric Semiconductor |
Transistor |