QM3208S - UBIQ

QM3208S Dual N-Channel MOSFET

The QM3208S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3208S meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low.

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 30V RDSON 25mΩ ID 6.2A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 .