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MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB • • • • • IC Collector current ........... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain.............. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Serv.
age Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 30 30 310 2 300
–40~+150
–40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | QM30TB-2H |
Mitsubishi Electric Semiconductor |
Transistor Module |
|
| 2 | QM30TB-24 |
Mitsubishi Electric Semiconductor |
Transistor Module |
|
| 3 | QM30TB-24B |
Mitsubishi Electric Semiconductor |
Transistor Module |
|
| 4 | QM30TB-H |
Mitsubishi |
Transistor |
|
| 5 | QM30TF-HB |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
|
| 6 | QM30TX-H |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
|
| 7 | QM30TX-HB |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
|
| 8 | QM3001D |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 9 | QM3001G |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 10 | QM3001J |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 11 | QM3001K |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 12 | QM3001S |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|