MITSUBISHI TRANSISTOR MODULES QM30HC-2H INDUCTION HEATER USE NON-INSULATED TYPE QM30HC-2H • • • • IC Collector current ........... 30A VCEX Collector-emitter voltage ......... 1600V hFE DC current gain. 75 Non-Insulated Type APPLICATION Induction heater for cooking OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensio.
1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings — 1600 1600 10 30 30 310 5 300
–40~+150
–40~+125 Charged part to case, AC for 1 minute Mounting screw M4 Typical value — 0.98~1.47 10~15 50 Unit V V V V A A W A A °C °C V N
·m kg
·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat)
–VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | QM30HA-H |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
2 | QM30HA-HB |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
3 | QM30HQ-24 |
Mitsubishi Electric Semiconductor |
DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE | |
4 | QM30HY-2H |
Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
5 | QM3001D |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
6 | QM3001G |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
7 | QM3001J |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
8 | QM3001K |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
9 | QM3001S |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
10 | QM3001U |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
11 | QM3001V |
UBIQ |
P-Ch 30V Fast Switching MOSFETs | |
12 | QM3002AN3 |
UBIQ |
N-Ch 30V Fast Switching MOSFETs |