QM0008J - UBIQ

QM0008J N-Ch 100V Fast Switching MOSFETs

The QM0008J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM0008J meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z.

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 100V RDSON 310mΩ ID 2.2A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissi.