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Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and therma.
Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Traction Medium Voltage Drives High Voltage Power Supplies 09/12 Rev. 8 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collecto.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | QID4515002 |
Powerex |
HVIGBT Module |
|
| 2 | QID0630006 |
Powerex Power Semiconductors |
Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) |
|
| 3 | QID0640020 |
Powerex |
IGBT Module |
|
| 4 | QID0660023 |
Powerex |
Dual IGBT Module |
|
| 5 | QID1210005 |
Powerex |
Split Dual Si/SiC Hybrid IGBT Module |
|
| 6 | QID1210006 |
Powerex |
Split Dual Si/SiC Hybrid IGBT Module |
|
| 7 | QID1230015 |
Powerex |
IGBT Module |
|
| 8 | QID3310006 |
Powerex |
Dual IGBT HVIGBT Module |
|
| 9 | QID3320002 |
Powerex |
Dual IGBT HVIGBT Module |
|
| 10 | QID3320004 |
Powerex |
Dual IGBT HVIGBT Module |
|
| 11 | QID3330001 |
Powerex |
Dual IGBT HVIGBT Module |
|
| 12 | QID3340001 |
Powerex |
Dual IGBT HVIGBT Module |
|